Multilayer h-BN (Boron Nitride) film grown on copper foil: 2" x 1"

Multilayer h-BN (Boron Nitride) film grown in copper foil.

Lead Time: 1 - 3 business days

h-BN is an insulator with a direct band gap of 5.97 eV. Due to its strong covalent sp² bonds in the plane, the in-plane mechanical strength and thermal conductivity of h-BN has been reported to be close to that of graphene. h-BN has an even higher chemical stability than graphene; it can be stable in air up to 1000 °C (in contrast, for graphene the corresponding temperature is 600 °C).

During Chemical Vapor Deposition, BN is grown on both sides of the copper foil

Specifications:

TEM image of perfect hexagonal structure

AFM image of multilayer BN on Cu

AFM scan of multilayer BN on Cu

If transferred onto an SiO₂ substrate, the BN film may be seen as a white film. However, it is difficult to recognize the BN film on copper using a microscope.

Transfer: PMMA Procedure, similar to that of graphene. It may be transferred on most substrates, which we may do in-house as custom work.

Academic References:

Ki Kang Kim, et. al. Synthesis and Characterization of Hexagonal Boron Nitride Film as a Dielectric Layer for Graphene Devices, ACS Nano, 2012, 6 (10), pp 8583–8590